Tutor: RECH IVAN
Advisor: IELMINI DANIELE Major Research topic
:Characterization of resistive nanoswitches for application of in-memory computingAbstract:
Resistive switching Random Access Memories (ReRAM) are one of the most promising emerging non-volatile memories thanks to the easy fabrication process, strong scaling possibilities, high speed and low power operation.
In addition, the conditional resistive switching can be exploited for the realization of in-memory computing systems based on normally-off memristive logic gates, hence overcoming the von Neumann bottleneck.
To achieve reliable logic operation it is necessary to develop devices with high endurance, low variability, and a large resistance window.
The research activity aims at the characterization and modelling of ReRAM devices to optimize the device stack and switching performance, and demonstrate novel logic circuits based on resistive nanoswitches.