|MELNIC OCTAVIAN||Cycle: XXXIII |
Tutor: RECH IVAN
Advisor: IELMINI DANIELE Major Research topic
:Characterization and Modeling of Embedded Phase Change Memory DevicesAbstract:
As the nonvolatile flash memory has reached the most advanced scaling nodes, other technologies are investigated, and among them the Phase Change Random Access Memory (PCRAM) is a very promising high-speed high-density solution for the next generation of data storage. It relies on the reversible change of resistance in a chalcogenide material by applying an electrical pulse which provokes a controlled local Joule heating, which in turn leaves the material either in the crystalline or in the amorphous state.
The main focus of my activity is the electrical characterization and analytical modeling of the PCRAM programmed state instabilities over time, in particular the resistance drift, so as to guarantee high-temperature data retention in embedded memory arrays. A further topic of interest is the application of PCRAM devices as the storage of analogue synaptic weights in embedded artificial neural networks.