|Thesis abstract: |
The research activity is focused on numeric simulations of next generation memory devices whit the goal to investigate their working principles, performances and reliability. With this aim the numeric approach is extremely useful: it permits to describe the electrical behavior using basic physical models, so allowing a deeper comprehension of all the physical mechanism occurring during device operations and, in case, to suggest technological optimizations. The research area covers different memory devices and, from time to time, it is focused on typical phenomena of the studied architecture. Each phenomenon has never been studied before, or fully not understood, or it represents a bottleneck to the technology development. Mentionable phenomena are: fringing effects of the electric field and percolative conduction due to atomistic doping on the random telegraph noise, that affects nanoscale MOS-based technologies, and a focused study for scaling perspectives of localized charge trapping in insulators. Impacts of these effects represent a key point to evaluate the reliability of next generation technology nodes and the necessity to consider innovative architectures.