|Thesis abstract: |
Near-infrared (NIR) single-photon detection is an enabling technology in many scientific and industrial fields and it is driving many efforts worldwide. Among the different technologies available for photon counting in the Near-Infrared (NIR, up to 1700 nm), InGaAs/InP Single-Photon Avalanche Diodes (SPADs) are one of the best choices for applications requiring not only high performance, but also high reliability and ease of implementation. The primary goal of this PhD research activity is the development of advanced detectors that overcome drawbacks and limitations of existing ones in terms of noise (dark count rate) and throughput (photon detection efficiency and count rate). Since III-V (InGaAs/InP) and IV-IV (Germanium-on-Silicon) technologies are not well developed yet, such fabrication processes will be investigated in order to reduce defect concentration, develop improved structures and design optimized detectors. The final goal is to design linear and squared arrays of SPAD for the near-infrared range with time-resolved capability.