TELESCA FABIO | Cycle: XXXVI |
Section: Electronics
Advisor: TOSI ALBERTO
Tutor: FERRARI GIORGIO
Major Research topic:
Single-Photon Avalanche Diodes in III-V compound semiconductor for near-infrared applications
Abstract:
Over the past few years, the number of applications that require low-noise single-photon detectors with high detection efficiency in the near-infrared (NIR) range has been growing. Examples of such applications include quantum computing, Quantum Key Distribution (QKD), three-dimensional LIght Detection And Ranging (LIDAR) imaging, Non-Line Of Sight (NLOS) imaging.
The aim of this doctoral project is the modeling, design, fabrication and characterization of Single-Photon Avalanche Diodes (SPADs) with high sensitivity in the NIR range and low noise.
InGaAs/InP SPADs are a consolidated technology in this field, but there is still room for improvement. During my PhD, I will focus on the development of new detectors, optimizing the design of the InGaAs/InP heterostructure and the vertical and horizontal geometry, as well as the fabrication conditions, with the purpose of enhancing the photon detection efficiency while reducing dark count rates.
Other SPAD-based solutions for the detection of NIR photons, such as Ge-on-Si heterostructures, will also be investigated.
The aim of this doctoral project is the modeling, design, fabrication and characterization of Single-Photon Avalanche Diodes (SPADs) with high sensitivity in the NIR range and low noise.
InGaAs/InP SPADs are a consolidated technology in this field, but there is still room for improvement. During my PhD, I will focus on the development of new detectors, optimizing the design of the InGaAs/InP heterostructure and the vertical and horizontal geometry, as well as the fabrication conditions, with the purpose of enhancing the photon detection efficiency while reducing dark count rates.
Other SPAD-based solutions for the detection of NIR photons, such as Ge-on-Si heterostructures, will also be investigated.
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